New strategies for producing defect free SiGe strained nanolayers.

David T, Aqua JN, Liu K, Favre L, Ronda A, Abbarchi M, Claude JB, Berbezier I

Open source

DOI
10.1038/s41598-018-21299-9
Published
2018 Feb 13
Container
Scientific reports
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1038/s41598-018-21299-9,
  title = {New strategies for producing defect free SiGe strained nanolayers.},
  author = {David T and Aqua JN and Liu K and Favre L and Ronda A and Abbarchi M and Claude JB and Berbezier I},
  year = {2018},
  journal = {Scientific reports},
  doi = {10.1038/s41598-018-21299-9},
  url = {https://doi.org/10.1038/s41598-018-21299-9}
}

RIS

TY  - JOUR
TI  - New strategies for producing defect free SiGe strained nanolayers.
AU  - David T
AU  - Aqua JN
AU  - Liu K
AU  - Favre L
AU  - Ronda A
AU  - Abbarchi M
AU  - Claude JB
AU  - Berbezier I
PY  - 2018
JO  - Scientific reports
DO  - 10.1038/s41598-018-21299-9
UR  - https://doi.org/10.1038/s41598-018-21299-9
ER  - 

APA

T, D., JN, A., K, L., L, F., A, R., M, A., JB, C., & I, B. (2018). New strategies for producing defect free SiGe strained nanolayers.. Scientific reports. https://doi.org/10.1038/s41598-018-21299-9

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