Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires

Zai-xing Yang, Yanxue Yin, Jiamin Sun, Luozhen Bian, Ning Han, Ziyao Zhou, Lei Shu, Fengyun Wang, Yunfa Chen, Aimin Song, Johnny C. Ho

Open source

DOI
10.1038/s41598-018-25209-x
Published
2018-05-02
Container
Scientific Reports
Publisher
Springer Science and Business Media LLC
Open access
unknown

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BibTeX

@article{allodium:10.1038/s41598-018-25209-x,
  title = {Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires},
  author = {Zai-xing Yang and Yanxue Yin and Jiamin Sun and Luozhen Bian and Ning Han and Ziyao Zhou and Lei Shu and Fengyun Wang and Yunfa Chen and Aimin Song and Johnny C. Ho},
  year = {2018},
  journal = {Scientific Reports},
  doi = {10.1038/s41598-018-25209-x},
  url = {https://doi.org/10.1038/s41598-018-25209-x}
}

RIS

TY  - JOUR
TI  - Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
AU  - Zai-xing Yang
AU  - Yanxue Yin
AU  - Jiamin Sun
AU  - Luozhen Bian
AU  - Ning Han
AU  - Ziyao Zhou
AU  - Lei Shu
AU  - Fengyun Wang
AU  - Yunfa Chen
AU  - Aimin Song
AU  - Johnny C. Ho
PY  - 2018
JO  - Scientific Reports
DO  - 10.1038/s41598-018-25209-x
UR  - https://doi.org/10.1038/s41598-018-25209-x
ER  - 

APA

Yang, Z., Yin, Y., Sun, J., Bian, L., Han, N., Zhou, Z., Shu, L., Wang, F., Chen, Y., Song, A., & Ho, J. C. (2018). Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires. Scientific Reports. https://doi.org/10.1038/s41598-018-25209-x

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