Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam.
- DOI
- 10.1038/s41598-021-00102-2
- Published
- 2021 Oct 19
- Container
- Scientific reports
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1038/s41598-021-00102-2,
title = {Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam.},
author = {Uedono A and Tanaka R and Takashima S and Ueno K and Edo M and Shima K and Kojima K and Chichibu SF and Ishibashi S},
year = {2021},
journal = {Scientific reports},
doi = {10.1038/s41598-021-00102-2},
url = {https://doi.org/10.1038/s41598-021-00102-2}
}RIS
TY - JOUR TI - Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam. AU - Uedono A AU - Tanaka R AU - Takashima S AU - Ueno K AU - Edo M AU - Shima K AU - Kojima K AU - Chichibu SF AU - Ishibashi S PY - 2021 JO - Scientific reports DO - 10.1038/s41598-021-00102-2 UR - https://doi.org/10.1038/s41598-021-00102-2 ER -
APA
A, U., R, T., S, T., K, U., M, E., K, S., K, K., SF, C., & S, I. (2021). Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam.. Scientific reports. https://doi.org/10.1038/s41598-021-00102-2
Source records
- pubmed · retrieved 2026-09-26T17:09:19.867Z