Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.

Mohammadi V, Nihtianov S, Fang C

DOI: 10.1038/s41598-021-99821-9
Published: 2021 Oct 12
Container: Scientific reports
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-021-99821-9,
  title = {Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.},
  author = {Mohammadi V and Nihtianov S and Fang C},
  year = {2021},
  journal = {Scientific reports},
  doi = {10.1038/s41598-021-99821-9},
  url = {https://doi.org/10.1038/s41598-021-99821-9}
}

RIS

TY  - JOUR
TI  - Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.
AU  - Mohammadi V
AU  - Nihtianov S
AU  - Fang C
PY  - 2021
JO  - Scientific reports
DO  - 10.1038/s41598-021-99821-9
UR  - https://doi.org/10.1038/s41598-021-99821-9
ER  -

APA

V, M., S, N., & C, F. (2021). Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.. Scientific reports. https://doi.org/10.1038/s41598-021-99821-9

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pubmed · retrieved 2026-09-26T16:19:17.147Z