Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
- DOI
- 10.1038/s41598-022-21092-9
- Published
- 2022-10-06
- Container
- Scientific Reports
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41598-022-21092-9,
title = {Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications},
author = {Peng Cui and Yuping Zeng},
year = {2022},
journal = {Scientific Reports},
doi = {10.1038/s41598-022-21092-9},
url = {https://doi.org/10.1038/s41598-022-21092-9}
}RIS
TY - JOUR TI - Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications AU - Peng Cui AU - Yuping Zeng PY - 2022 JO - Scientific Reports DO - 10.1038/s41598-022-21092-9 UR - https://doi.org/10.1038/s41598-022-21092-9 ER -
APA
Cui, P., & Zeng, Y. (2022). Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications. Scientific Reports. https://doi.org/10.1038/s41598-022-21092-9
Source records
- crossref · retrieved 2026-09-25T11:37:21.930Z