Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
- DOI
- 10.1038/s41598-022-24949-1
- Published
- 2022-11-27
- Container
- Scientific Reports
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41598-022-24949-1,
title = {Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma},
author = {Thi-Thuy-Nga Nguyen and Kazunori Shinoda and Hirotaka Hamamura and Kenji Maeda and Kenetsu Yokogawa and Masaru Izawa and Kenji Ishikawa and Masaru Hori},
year = {2022},
journal = {Scientific Reports},
doi = {10.1038/s41598-022-24949-1},
url = {https://doi.org/10.1038/s41598-022-24949-1}
}RIS
TY - JOUR TI - Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma AU - Thi-Thuy-Nga Nguyen AU - Kazunori Shinoda AU - Hirotaka Hamamura AU - Kenji Maeda AU - Kenetsu Yokogawa AU - Masaru Izawa AU - Kenji Ishikawa AU - Masaru Hori PY - 2022 JO - Scientific Reports DO - 10.1038/s41598-022-24949-1 UR - https://doi.org/10.1038/s41598-022-24949-1 ER -
APA
Nguyen, T., Shinoda, K., Hamamura, H., Maeda, K., Yokogawa, K., Izawa, M., Ishikawa, K., & Hori, M. (2022). Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma. Scientific Reports. https://doi.org/10.1038/s41598-022-24949-1
Source records
- crossref · retrieved 2026-09-27T14:39:32.865Z