High-temperature operation of gallium oxide memristors up to 600 K.

Sato K, Hayashi Y, Masaoka N, Tohei T, Sakai A

DOI: 10.1038/s41598-023-28075-4
Published: 2023 Jan 30
Container: Scientific reports
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-023-28075-4,
  title = {High-temperature operation of gallium oxide memristors up to 600 K.},
  author = {Sato K and Hayashi Y and Masaoka N and Tohei T and Sakai A},
  year = {2023},
  journal = {Scientific reports},
  doi = {10.1038/s41598-023-28075-4},
  url = {https://doi.org/10.1038/s41598-023-28075-4}
}

RIS

TY  - JOUR
TI  - High-temperature operation of gallium oxide memristors up to 600 K.
AU  - Sato K
AU  - Hayashi Y
AU  - Masaoka N
AU  - Tohei T
AU  - Sakai A
PY  - 2023
JO  - Scientific reports
DO  - 10.1038/s41598-023-28075-4
UR  - https://doi.org/10.1038/s41598-023-28075-4
ER  -

APA

K, S., Y, H., N, M., T, T., & A, S. (2023). High-temperature operation of gallium oxide memristors up to 600 K.. Scientific reports. https://doi.org/10.1038/s41598-023-28075-4

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pubmed · retrieved 2026-11-10T12:09:36.783Z