Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance.

Barik R, Dhar RS, Hussein MI

DOI: 10.1038/s41598-024-53487-1
Published: 2024 Feb 5
Container: Scientific reports
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-024-53487-1,
  title = {Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance.},
  author = {Barik R and Dhar RS and Hussein MI},
  year = {2024},
  journal = {Scientific reports},
  doi = {10.1038/s41598-024-53487-1},
  url = {https://doi.org/10.1038/s41598-024-53487-1}
}

RIS

TY  - JOUR
TI  - Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance.
AU  - Barik R
AU  - Dhar RS
AU  - Hussein MI
PY  - 2024
JO  - Scientific reports
DO  - 10.1038/s41598-024-53487-1
UR  - https://doi.org/10.1038/s41598-024-53487-1
ER  -

APA

R, B., RS, D., & MI, H. (2024). Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance.. Scientific reports. https://doi.org/10.1038/s41598-024-53487-1

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pubmed · retrieved 2026-09-25T10:47:36.243Z