Structural and optoelectronic properties of NiOx thin films synthesized via co-precipitation for hole transport layer applications.

Hamzah HM, Soin NB, Wahab YA, Hossen MJ, Soudagar MEM, Nur-E-Alam M, Islam MA, Xu C, Patel M

DOI: 10.1038/s41598-025-18509-6
Published: 2025 Oct 6
Container: Scientific reports
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-025-18509-6,
  title = {Structural and optoelectronic properties of NiOx thin films synthesized via co-precipitation for hole transport layer applications.},
  author = {Hamzah HM and Soin NB and Wahab YA and Hossen MJ and Soudagar MEM and Nur-E-Alam M and Islam MA and Xu C and Patel M},
  year = {2025},
  journal = {Scientific reports},
  doi = {10.1038/s41598-025-18509-6},
  url = {https://doi.org/10.1038/s41598-025-18509-6}
}

RIS

TY  - JOUR
TI  - Structural and optoelectronic properties of NiOx thin films synthesized via co-precipitation for hole transport layer applications.
AU  - Hamzah HM
AU  - Soin NB
AU  - Wahab YA
AU  - Hossen MJ
AU  - Soudagar MEM
AU  - Nur-E-Alam M
AU  - Islam MA
AU  - Xu C
AU  - Patel M
PY  - 2025
JO  - Scientific reports
DO  - 10.1038/s41598-025-18509-6
UR  - https://doi.org/10.1038/s41598-025-18509-6
ER  -

APA

HM, H., NB, S., YA, W., MJ, H., MEM, S., M, N., MA, I., C, X., & M, P. (2025). Structural and optoelectronic properties of NiOx thin films synthesized via co-precipitation for hole transport layer applications.. Scientific reports. https://doi.org/10.1038/s41598-025-18509-6

Source records

pubmed · retrieved 2026-09-26T13:15:29.870Z