Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process.

Saxena PK, Srivastava P, Srivastava A, Saxena A.

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DOI: 10.1038/s41598-025-89681-y
Published: 2025-04-12
Container: Sci Rep
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-025-89681-y,
  title = {Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process.},
  author = {Saxena PK and  Srivastava P and  Srivastava A and  Saxena A.},
  year = {2025},
  journal = {Sci Rep},
  doi = {10.1038/s41598-025-89681-y},
  url = {https://doi.org/10.1038/s41598-025-89681-y}
}

RIS

TY  - JOUR
TI  - Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process.
AU  - Saxena PK
AU  -  Srivastava P
AU  -  Srivastava A
AU  -  Saxena A.
PY  - 2025
JO  - Sci Rep
DO  - 10.1038/s41598-025-89681-y
UR  - https://doi.org/10.1038/s41598-025-89681-y
ER  -

APA

PK, S., P, S., A, S., & A., S. (2025). Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process.. Sci Rep. https://doi.org/10.1038/s41598-025-89681-y

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europe-pmc · retrieved 2026-11-10T13:58:58.553Z
doaj · retrieved 2026-11-10T13:58:58.538Z