Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications.

Prakash EB, Ray A, Bordoloi S

DOI: 10.1038/s41598-026-55489-7
Published: 2026 May 29
Container: Scientific reports
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-026-55489-7,
  title = {Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications.},
  author = {Prakash EB and Ray A and Bordoloi S},
  year = {2026},
  journal = {Scientific reports},
  doi = {10.1038/s41598-026-55489-7},
  url = {https://doi.org/10.1038/s41598-026-55489-7}
}

RIS

TY  - JOUR
TI  - Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications.
AU  - Prakash EB
AU  - Ray A
AU  - Bordoloi S
PY  - 2026
JO  - Scientific reports
DO  - 10.1038/s41598-026-55489-7
UR  - https://doi.org/10.1038/s41598-026-55489-7
ER  -

APA

EB, P., A, R., & S, B. (2026). Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications.. Scientific reports. https://doi.org/10.1038/s41598-026-55489-7

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pubmed · retrieved 2026-09-25T23:47:21.715Z