Channel-engineered GAA FETs: From device to circuit perspective for Angstrom technology nodes.

Bharath Sreenivasulu V, Thoti N

DOI: 10.1038/s41598-026-58015-x
Published: 2026 Jun 19
Container: Scientific reports
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-026-58015-x,
  title = {Channel-engineered GAA FETs: From device to circuit perspective for Angstrom technology nodes.},
  author = {Bharath Sreenivasulu V and Thoti N},
  year = {2026},
  journal = {Scientific reports},
  doi = {10.1038/s41598-026-58015-x},
  url = {https://doi.org/10.1038/s41598-026-58015-x}
}

RIS

TY  - JOUR
TI  - Channel-engineered GAA FETs: From device to circuit perspective for Angstrom technology nodes.
AU  - Bharath Sreenivasulu V
AU  - Thoti N
PY  - 2026
JO  - Scientific reports
DO  - 10.1038/s41598-026-58015-x
UR  - https://doi.org/10.1038/s41598-026-58015-x
ER  -

APA

V, B. S., & N, T. (2026). Channel-engineered GAA FETs: From device to circuit perspective for Angstrom technology nodes.. Scientific reports. https://doi.org/10.1038/s41598-026-58015-x

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pubmed · retrieved 2026-09-25T18:56:55.960Z