Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers

B. Mounika, J. Ajayan, Ribu Mathew, Srinivasa Rao Karumuri, Asisa Kumar Panigrahy

Open source

DOI: 10.1038/s41598-026-61548-w
Published: 2026-07-09
Container: Scientific Reports
Publisher: Springer Science and Business Media LLC
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-026-61548-w,
  title = {Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers},
  author = {B. Mounika and J. Ajayan and Ribu Mathew and Srinivasa Rao Karumuri and Asisa Kumar Panigrahy},
  year = {2026},
  journal = {Scientific Reports},
  doi = {10.1038/s41598-026-61548-w},
  url = {https://doi.org/10.1038/s41598-026-61548-w}
}

RIS

TY  - JOUR
TI  - Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers
AU  - B. Mounika
AU  - J. Ajayan
AU  - Ribu Mathew
AU  - Srinivasa Rao Karumuri
AU  - Asisa Kumar Panigrahy
PY  - 2026
JO  - Scientific Reports
DO  - 10.1038/s41598-026-61548-w
UR  - https://doi.org/10.1038/s41598-026-61548-w
ER  -

APA

Mounika, B., Ajayan, J., Mathew, R., Karumuri, S. R., & Panigrahy, A. K. (2026). Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers. Scientific Reports. https://doi.org/10.1038/s41598-026-61548-w

Source records

crossref · retrieved 2026-09-26T11:17:03.366Z