Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
- DOI
- 10.1038/s41699-021-00238-9
- Published
- 2021-06-02
- Container
- npj 2D Materials and Applications
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41699-021-00238-9,
title = {Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors},
author = {Jiang Cao and Yu Wu and Hao Zhang and Demetrio Logoteta and Shengli Zhang and Marco Pala},
year = {2021},
journal = {npj 2D Materials and Applications},
doi = {10.1038/s41699-021-00238-9},
url = {https://doi.org/10.1038/s41699-021-00238-9}
}RIS
TY - JOUR TI - Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors AU - Jiang Cao AU - Yu Wu AU - Hao Zhang AU - Demetrio Logoteta AU - Shengli Zhang AU - Marco Pala PY - 2021 JO - npj 2D Materials and Applications DO - 10.1038/s41699-021-00238-9 UR - https://doi.org/10.1038/s41699-021-00238-9 ER -
APA
Cao, J., Wu, Y., Zhang, H., Logoteta, D., Zhang, S., & Pala, M. (2021). Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors. npj 2D Materials and Applications. https://doi.org/10.1038/s41699-021-00238-9
Source records
- crossref · retrieved 2026-09-26T19:17:47.109Z