Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy

Jonathan Bradford, Amy F. M. Collins, Tin S. Cheng, Jialiang Shen, James Kerfoot, Graham A. Rance, Jiahan Li, Christopher J. Mellor, Peter H. Beton, Guillaume Cassabois, Siyuan Dai, James H. Edgar, Sergei V. Novikov

Open source

DOI
10.1038/s41699-025-00619-4
Published
2025-11-19
Container
npj 2D Materials and Applications
Publisher
Springer Science and Business Media LLC
Open access
unknown

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BibTeX

@article{allodium:10.1038/s41699-025-00619-4,
  title = {Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy},
  author = {Jonathan Bradford and Amy F. M. Collins and Tin S. Cheng and Jialiang Shen and James Kerfoot and Graham A. Rance and Jiahan Li and Christopher J. Mellor and Peter H. Beton and Guillaume Cassabois and Siyuan Dai and James H. Edgar and Sergei V. Novikov},
  year = {2025},
  journal = {npj 2D Materials and Applications},
  doi = {10.1038/s41699-025-00619-4},
  url = {https://doi.org/10.1038/s41699-025-00619-4}
}

RIS

TY  - JOUR
TI  - Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy
AU  - Jonathan Bradford
AU  - Amy F. M. Collins
AU  - Tin S. Cheng
AU  - Jialiang Shen
AU  - James Kerfoot
AU  - Graham A. Rance
AU  - Jiahan Li
AU  - Christopher J. Mellor
AU  - Peter H. Beton
AU  - Guillaume Cassabois
AU  - Siyuan Dai
AU  - James H. Edgar
AU  - Sergei V. Novikov
PY  - 2025
JO  - npj 2D Materials and Applications
DO  - 10.1038/s41699-025-00619-4
UR  - https://doi.org/10.1038/s41699-025-00619-4
ER  - 

APA

Bradford, J., Collins, A. F. M., Cheng, T. S., Shen, J., Kerfoot, J., Rance, G. A., Li, J., Mellor, C. J., Beton, P. H., Cassabois, G., Dai, S., Edgar, J. H., & Novikov, S. V. (2025). Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy. npj 2D Materials and Applications. https://doi.org/10.1038/s41699-025-00619-4

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