Oxide induced degradation in MoS(2) field-effect transistors.

Ducry F, Van Troeye B, Dossena M, Luisier M, Pourtois G, Afzalian A

DOI: 10.1038/s41699-026-00677-2
Published: 2026
Container: NPJ 2D materials and applications
Publisher: Not recorded
Open access: yes

Credibility signals

limited evidence Score 45/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

cautionDOI registered: No matching Crossref record was present in this response. Source: Crossref; license: CC0 metadata
cautionDOI resolves: No matching Crossref record was present in this response. Source: Crossref; license: CC0 metadata
not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility. Source: DOAJ; license: CC0
not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredROR affiliation: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
supportingOpen access status: Normalized open-access status: open. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
not scoredPublication license: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredPublication version: A publication version was supplied but is not scored. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer

Cite this work

BibTeX

@article{allodium:10.1038/s41699-026-00677-2,
  title = {Oxide induced degradation in MoS(2) field-effect transistors.},
  author = {Ducry F and Van Troeye B and Dossena M and Luisier M and Pourtois G and Afzalian A},
  year = {2026},
  journal = {NPJ 2D materials and applications},
  doi = {10.1038/s41699-026-00677-2},
  url = {https://doi.org/10.1038/s41699-026-00677-2}
}

RIS

TY  - JOUR
TI  - Oxide induced degradation in MoS(2) field-effect transistors.
AU  - Ducry F
AU  - Van Troeye B
AU  - Dossena M
AU  - Luisier M
AU  - Pourtois G
AU  - Afzalian A
PY  - 2026
JO  - NPJ 2D materials and applications
DO  - 10.1038/s41699-026-00677-2
UR  - https://doi.org/10.1038/s41699-026-00677-2
ER  -

APA

F, D., B, V. T., M, D., M, L., G, P., & A, A. (2026). Oxide induced degradation in MoS(2) field-effect transistors.. NPJ 2D materials and applications. https://doi.org/10.1038/s41699-026-00677-2

Source records

pubmed · retrieved 2026-09-26T22:43:25.455Z