Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability
- DOI
- 10.1038/s43246-025-01020-w
- Published
- 2026-01-09
- Container
- Communications Materials
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s43246-025-01020-w,
title = {Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability},
author = {Seyed Mehdi Sattari-Esfahlan and Yury Illarionov and Fang Xu and Alexandros Provias and Saeed Mirzaei and Jan Michalička and Theresia Knobloch and Ondřej Man and Yangbo Zhou and Tibor Grasser},
year = {2026},
journal = {Communications Materials},
doi = {10.1038/s43246-025-01020-w},
url = {https://doi.org/10.1038/s43246-025-01020-w}
}RIS
TY - JOUR TI - Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability AU - Seyed Mehdi Sattari-Esfahlan AU - Yury Illarionov AU - Fang Xu AU - Alexandros Provias AU - Saeed Mirzaei AU - Jan Michalička AU - Theresia Knobloch AU - Ondřej Man AU - Yangbo Zhou AU - Tibor Grasser PY - 2026 JO - Communications Materials DO - 10.1038/s43246-025-01020-w UR - https://doi.org/10.1038/s43246-025-01020-w ER -
APA
Sattari-Esfahlan, S. M., Illarionov, Y., Xu, F., Provias, A., Mirzaei, S., Michalička, J., Knobloch, T., Man, O., Zhou, Y., & Grasser, T. (2026). Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability. Communications Materials. https://doi.org/10.1038/s43246-025-01020-w
Source records
- crossref · retrieved 2026-09-27T00:23:01.465Z