Mobile charges in MoS<sub>2</sub>/high-k oxide transistors: from abnormal instabilities to transient negative differential resistance.
- DOI
- 10.1038/s44172-026-00716-2
- Published
- 2026-07-02
- Container
- Commun Eng
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1038/s44172-026-00716-2,
title = {Mobile charges in MoS\<sub\>2\</sub\>/high-k oxide transistors: from abnormal instabilities to transient negative differential resistance.},
author = {Zhou S and Cai H and Wu Y and Min Y and Yuan R and Lv Y and Huang J and Shi Y and Illarionov YY.},
year = {2026},
journal = {Commun Eng},
doi = {10.1038/s44172-026-00716-2},
url = {https://doi.org/10.1038/s44172-026-00716-2}
}RIS
TY - JOUR TI - Mobile charges in MoS<sub>2</sub>/high-k oxide transistors: from abnormal instabilities to transient negative differential resistance. AU - Zhou S AU - Cai H AU - Wu Y AU - Min Y AU - Yuan R AU - Lv Y AU - Huang J AU - Shi Y AU - Illarionov YY. PY - 2026 JO - Commun Eng DO - 10.1038/s44172-026-00716-2 UR - https://doi.org/10.1038/s44172-026-00716-2 ER -
APA
S, Z., H, C., Y, W., Y, M., R, Y., Y, L., J, H., Y, S., & YY., I. (2026). Mobile charges in MoS<sub>2</sub>/high-k oxide transistors: from abnormal instabilities to transient negative differential resistance.. Commun Eng. https://doi.org/10.1038/s44172-026-00716-2
Source records
- europe-pmc · retrieved 2026-11-10T12:22:08.983Z
- doaj · retrieved 2026-11-10T12:22:08.976Z