Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.

Park JH, Kim HY, Jang GS, Seok KH, Chae HJ, Lee SK, Kiaee Z, Joo SK.

DOI: 10.1038/srep23189
Published: 2016-03-23
Container: Sci Rep
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/srep23189,
  title = {Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.},
  author = {Park JH and  Kim HY and  Jang GS and  Seok KH and  Chae HJ and  Lee SK and  Kiaee Z and  Joo SK.},
  year = {2016},
  journal = {Sci Rep},
  doi = {10.1038/srep23189},
  url = {https://doi.org/10.1038/srep23189}
}

RIS

TY  - JOUR
TI  - Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.
AU  - Park JH
AU  -  Kim HY
AU  -  Jang GS
AU  -  Seok KH
AU  -  Chae HJ
AU  -  Lee SK
AU  -  Kiaee Z
AU  -  Joo SK.
PY  - 2016
JO  - Sci Rep
DO  - 10.1038/srep23189
UR  - https://doi.org/10.1038/srep23189
ER  -

APA

JH, P., HY, K., GS, J., KH, S., HJ, C., SK, L., Z, K., & SK., J. (2016). Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.. Sci Rep. https://doi.org/10.1038/srep23189

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europe-pmc · retrieved 2026-09-25T00:45:36.125Z