Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.
- DOI
- 10.1038/srep25674
- Published
- 2016 May 11
- Container
- Scientific reports
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1038/srep25674,
title = {Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.},
author = {Cariou R and Chen W and Maurice JL and Yu J and Patriarche G and Mauguin O and Largeau L and Decobert J and Roca I Cabarrocas P},
year = {2016},
journal = {Scientific reports},
doi = {10.1038/srep25674},
url = {https://doi.org/10.1038/srep25674}
}RIS
TY - JOUR TI - Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration. AU - Cariou R AU - Chen W AU - Maurice JL AU - Yu J AU - Patriarche G AU - Mauguin O AU - Largeau L AU - Decobert J AU - Roca I Cabarrocas P PY - 2016 JO - Scientific reports DO - 10.1038/srep25674 UR - https://doi.org/10.1038/srep25674 ER -
APA
R, C., W, C., JL, M., J, Y., G, P., O, M., L, L., J, D., & P, R. I. C. (2016). Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.. Scientific reports. https://doi.org/10.1038/srep25674
Source records
- pubmed · retrieved 2026-11-10T14:30:17.322Z