Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication.

Du C, Huang X, Jiang C, Pu X, Zhao Z, Jing L, Hu W, Wang ZL

DOI: 10.1038/srep37132
Published: 2016 Nov 14
Container: Scientific reports
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/srep37132,
  title = {Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication.},
  author = {Du C and Huang X and Jiang C and Pu X and Zhao Z and Jing L and Hu W and Wang ZL},
  year = {2016},
  journal = {Scientific reports},
  doi = {10.1038/srep37132},
  url = {https://doi.org/10.1038/srep37132}
}

RIS

TY  - JOUR
TI  - Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication.
AU  - Du C
AU  - Huang X
AU  - Jiang C
AU  - Pu X
AU  - Zhao Z
AU  - Jing L
AU  - Hu W
AU  - Wang ZL
PY  - 2016
JO  - Scientific reports
DO  - 10.1038/srep37132
UR  - https://doi.org/10.1038/srep37132
ER  -

APA

C, D., X, H., C, J., X, P., Z, Z., L, J., W, H., & ZL, W. (2016). Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication.. Scientific reports. https://doi.org/10.1038/srep37132

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pubmed · retrieved 2026-09-27T15:26:42.345Z