Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.

Kim J, Oh S, Mastro MA, Kim J

DOI: 10.1039/c6cp01987k
Published: 2016 Jun 21
Container: Physical chemistry chemical physics : PCCP
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/c6cp01987k,
  title = {Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.},
  author = {Kim J and Oh S and Mastro MA and Kim J},
  year = {2016},
  journal = {Physical chemistry chemical physics : PCCP},
  doi = {10.1039/c6cp01987k},
  url = {https://doi.org/10.1039/c6cp01987k}
}

RIS

TY  - JOUR
TI  - Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.
AU  - Kim J
AU  - Oh S
AU  - Mastro MA
AU  - Kim J
PY  - 2016
JO  - Physical chemistry chemical physics : PCCP
DO  - 10.1039/c6cp01987k
UR  - https://doi.org/10.1039/c6cp01987k
ER  -

APA

J, K., S, O., MA, M., & J, K. (2016). Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.. Physical chemistry chemical physics : PCCP. https://doi.org/10.1039/c6cp01987k

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pubmed · retrieved 2026-11-10T08:31:50.913Z