Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure.

Ben Sedrine N, Ribeiro-Andrade R, Gustafsson A, Soares MR, Bourgard J, Teixeira JP, Salomé PMP, Correia MR, Moreira MVB, De Oliveira AG, González JC, Leitão JP

Open source

DOI: 10.1039/c7nr08395e
Published: 2018 Feb 22
Container: Nanoscale
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/c7nr08395e,
  title = {Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure.},
  author = {Ben Sedrine N and Ribeiro-Andrade R and Gustafsson A and Soares MR and Bourgard J and Teixeira JP and Salomé PMP and Correia MR and Moreira MVB and De Oliveira AG and González JC and Leitão JP},
  year = {2018},
  journal = {Nanoscale},
  doi = {10.1039/c7nr08395e},
  url = {https://doi.org/10.1039/c7nr08395e}
}

RIS

TY  - JOUR
TI  - Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure.
AU  - Ben Sedrine N
AU  - Ribeiro-Andrade R
AU  - Gustafsson A
AU  - Soares MR
AU  - Bourgard J
AU  - Teixeira JP
AU  - Salomé PMP
AU  - Correia MR
AU  - Moreira MVB
AU  - De Oliveira AG
AU  - González JC
AU  - Leitão JP
PY  - 2018
JO  - Nanoscale
DO  - 10.1039/c7nr08395e
UR  - https://doi.org/10.1039/c7nr08395e
ER  -

APA

N, B. S., R, R., A, G., MR, S., J, B., JP, T., PMP, S., MR, C., MVB, M., AG, D. O., JC, G., & JP, L. (2018). Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure.. Nanoscale. https://doi.org/10.1039/c7nr08395e

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pubmed · retrieved 2026-09-25T06:38:33.065Z