Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability.

Jung SH, Yang JS, Kim YB, Deshpande NG, Kim DS, Choi JH, Suh HW, Lee HH, Cho HK

DOI: 10.1039/d1mh01568k
Published: 2022 Mar 7
Container: Materials horizons
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1039/d1mh01568k,
  title = {Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability.},
  author = {Jung SH and Yang JS and Kim YB and Deshpande NG and Kim DS and Choi JH and Suh HW and Lee HH and Cho HK},
  year = {2022},
  journal = {Materials horizons},
  doi = {10.1039/d1mh01568k},
  url = {https://doi.org/10.1039/d1mh01568k}
}

RIS

TY  - JOUR
TI  - Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability.
AU  - Jung SH
AU  - Yang JS
AU  - Kim YB
AU  - Deshpande NG
AU  - Kim DS
AU  - Choi JH
AU  - Suh HW
AU  - Lee HH
AU  - Cho HK
PY  - 2022
JO  - Materials horizons
DO  - 10.1039/d1mh01568k
UR  - https://doi.org/10.1039/d1mh01568k
ER  -

APA

SH, J., JS, Y., YB, K., NG, D., DS, K., JH, C., HW, S., HH, L., & HK, C. (2022). Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability.. Materials horizons. https://doi.org/10.1039/d1mh01568k

Source records

pubmed · retrieved 2026-09-25T06:24:36.627Z
europe-pmc · retrieved 2026-09-25T06:24:36.611Z