Retracted Article: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability

Sung Hyeon Jung, Ji Sook Yang, Young Been Kim, Nishad G. Deshpande, Dong Su Kim, Ji Hoon Choi, Hee Won Suh, Hak Hyeon Lee, Hyung Koun Cho

Open source

DOI
10.1039/d1mh01568k
Published
2022
Container
Materials Horizons
Publisher
Royal Society of Chemistry (RSC)
Open access
unknown

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BibTeX

@article{allodium:10.1039/d1mh01568k,
  title = {Retracted Article: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability},
  author = {Sung Hyeon Jung and Ji Sook Yang and Young Been Kim and Nishad G. Deshpande and Dong Su Kim and Ji Hoon Choi and Hee Won Suh and Hak Hyeon Lee and Hyung Koun Cho},
  year = {2022},
  journal = {Materials Horizons},
  doi = {10.1039/d1mh01568k},
  url = {https://doi.org/10.1039/d1mh01568k}
}

RIS

TY  - JOUR
TI  - Retracted Article: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability
AU  - Sung Hyeon Jung
AU  - Ji Sook Yang
AU  - Young Been Kim
AU  - Nishad G. Deshpande
AU  - Dong Su Kim
AU  - Ji Hoon Choi
AU  - Hee Won Suh
AU  - Hak Hyeon Lee
AU  - Hyung Koun Cho
PY  - 2022
JO  - Materials Horizons
DO  - 10.1039/d1mh01568k
UR  - https://doi.org/10.1039/d1mh01568k
ER  - 

APA

Jung, S. H., Yang, J. S., Kim, Y. B., Deshpande, N. G., Kim, D. S., Choi, J. H., Suh, H. W., Lee, H. H., & Cho, H. K. (2022). Retracted Article: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability. Materials Horizons. https://doi.org/10.1039/d1mh01568k

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