Interface-engineering studies on the photoelectric properties and stability of the CsSnI(3)-SnS heterostructure.

Peng Y, Gu C, Liu B, Cai MQ, Yang J

DOI: 10.1039/d2cp02742a
Published: 2022 Oct 12
Container: Physical chemistry chemical physics : PCCP
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d2cp02742a,
  title = {Interface-engineering studies on the photoelectric properties and stability of the CsSnI(3)-SnS heterostructure.},
  author = {Peng Y and Gu C and Liu B and Cai MQ and Yang J},
  year = {2022},
  journal = {Physical chemistry chemical physics : PCCP},
  doi = {10.1039/d2cp02742a},
  url = {https://doi.org/10.1039/d2cp02742a}
}

RIS

TY  - JOUR
TI  - Interface-engineering studies on the photoelectric properties and stability of the CsSnI(3)-SnS heterostructure.
AU  - Peng Y
AU  - Gu C
AU  - Liu B
AU  - Cai MQ
AU  - Yang J
PY  - 2022
JO  - Physical chemistry chemical physics : PCCP
DO  - 10.1039/d2cp02742a
UR  - https://doi.org/10.1039/d2cp02742a
ER  -

APA

Y, P., C, G., B, L., MQ, C., & J, Y. (2022). Interface-engineering studies on the photoelectric properties and stability of the CsSnI(3)-SnS heterostructure.. Physical chemistry chemical physics : PCCP. https://doi.org/10.1039/d2cp02742a

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pubmed · retrieved 2026-09-25T05:15:19.870Z