Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications.

Khan R, Rehman NU, Ilyas N, Sfina N, Barhoumi M, Khan A, Althubeiti K, Otaibi SA, Iqbal S, Rahman N, Sohail M, Ullah A, Del Rosso T, Zaman Q, Ali Khan A, Abdullaev SS, Khan A

Open source

DOI: 10.1039/d2nr05257a
Published: 2023 Jan 27
Container: Nanoscale
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1039/d2nr05257a,
  title = {Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications.},
  author = {Khan R and Rehman NU and Ilyas N and Sfina N and Barhoumi M and Khan A and Althubeiti K and Otaibi SA and Iqbal S and Rahman N and Sohail M and Ullah A and Del Rosso T and Zaman Q and Ali Khan A and Abdullaev SS and Khan A},
  year = {2023},
  journal = {Nanoscale},
  doi = {10.1039/d2nr05257a},
  url = {https://doi.org/10.1039/d2nr05257a}
}

RIS

TY  - JOUR
TI  - Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications.
AU  - Khan R
AU  - Rehman NU
AU  - Ilyas N
AU  - Sfina N
AU  - Barhoumi M
AU  - Khan A
AU  - Althubeiti K
AU  - Otaibi SA
AU  - Iqbal S
AU  - Rahman N
AU  - Sohail M
AU  - Ullah A
AU  - Del Rosso T
AU  - Zaman Q
AU  - Ali Khan A
AU  - Abdullaev SS
AU  - Khan A
PY  - 2023
JO  - Nanoscale
DO  - 10.1039/d2nr05257a
UR  - https://doi.org/10.1039/d2nr05257a
ER  -

APA

R, K., NU, R., N, I., N, S., M, B., A, K., K, A., SA, O., S, I., N, R., M, S., A, U., T, D. R., Q, Z., A, A. K., SS, A., & A, K. (2023). Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications.. Nanoscale. https://doi.org/10.1039/d2nr05257a

Source records

pubmed · retrieved 2026-11-10T09:23:04.019Z
europe-pmc · retrieved 2026-11-10T09:23:04.016Z