Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning.

Zhao R, Wang X, Xu H, Wei Y, He X

DOI: 10.1039/d3nr04819e
Published: 2024 Feb 22
Container: Nanoscale
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d3nr04819e,
  title = {Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning.},
  author = {Zhao R and Wang X and Xu H and Wei Y and He X},
  year = {2024},
  journal = {Nanoscale},
  doi = {10.1039/d3nr04819e},
  url = {https://doi.org/10.1039/d3nr04819e}
}

RIS

TY  - JOUR
TI  - Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning.
AU  - Zhao R
AU  - Wang X
AU  - Xu H
AU  - Wei Y
AU  - He X
PY  - 2024
JO  - Nanoscale
DO  - 10.1039/d3nr04819e
UR  - https://doi.org/10.1039/d3nr04819e
ER  -

APA

R, Z., X, W., H, X., Y, W., & X, H. (2024). Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning.. Nanoscale. https://doi.org/10.1039/d3nr04819e

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pubmed · retrieved 2026-09-25T00:31:52.510Z