Effects of thermal annealing on analog resistive switching behavior in bilayer HfO(2)/ZnO synaptic devices: the role of ZnO grain boundaries.
- DOI
- 10.1039/d3nr04917e
- Published
- 2024 Feb 29
- Container
- Nanoscale
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1039/d3nr04917e,
title = {Effects of thermal annealing on analog resistive switching behavior in bilayer HfO(2)/ZnO synaptic devices: the role of ZnO grain boundaries.},
author = {An YJ and Yan H and Yeom CM and Jeong JK and Eadi SB and Lee HD and Kwon HM},
year = {2024},
journal = {Nanoscale},
doi = {10.1039/d3nr04917e},
url = {https://doi.org/10.1039/d3nr04917e}
}RIS
TY - JOUR TI - Effects of thermal annealing on analog resistive switching behavior in bilayer HfO(2)/ZnO synaptic devices: the role of ZnO grain boundaries. AU - An YJ AU - Yan H AU - Yeom CM AU - Jeong JK AU - Eadi SB AU - Lee HD AU - Kwon HM PY - 2024 JO - Nanoscale DO - 10.1039/d3nr04917e UR - https://doi.org/10.1039/d3nr04917e ER -
APA
YJ, A., H, Y., CM, Y., JK, J., SB, E., HD, L., & HM, K. (2024). Effects of thermal annealing on analog resistive switching behavior in bilayer HfO(2)/ZnO synaptic devices: the role of ZnO grain boundaries.. Nanoscale. https://doi.org/10.1039/d3nr04917e
Source records
- pubmed · retrieved 2026-09-25T05:42:32.280Z
- europe-pmc · retrieved 2026-09-25T05:42:32.296Z