Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study.

Pradeepkumar A, Cortie D, Smyth E, Le Brun AP, Iacopi F

DOI: 10.1039/d3ra08289j
Published: 2024 Jan 17
Container: RSC advances
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1039/d3ra08289j,
  title = {Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study.},
  author = {Pradeepkumar A and Cortie D and Smyth E and Le Brun AP and Iacopi F},
  year = {2024},
  journal = {RSC advances},
  doi = {10.1039/d3ra08289j},
  url = {https://doi.org/10.1039/d3ra08289j}
}

RIS

TY  - JOUR
TI  - Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study.
AU  - Pradeepkumar A
AU  - Cortie D
AU  - Smyth E
AU  - Le Brun AP
AU  - Iacopi F
PY  - 2024
JO  - RSC advances
DO  - 10.1039/d3ra08289j
UR  - https://doi.org/10.1039/d3ra08289j
ER  -

APA

A, P., D, C., E, S., AP, L. B., & F, I. (2024). Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study.. RSC advances. https://doi.org/10.1039/d3ra08289j

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pubmed · retrieved 2026-09-26T13:46:10.942Z