HfO(2)-based ferroelectric synaptic devices: challenges and engineering solutions.

Kwon T, Choi HS, Lee DH, Han DH, Cho YH, Jeon I, Jung CH, Lim H, Moon T, Park MH

DOI: 10.1039/d4cc05293e
Published: 2025 Feb 13
Container: Chemical communications (Cambridge, England)
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d4cc05293e,
  title = {HfO(2)-based ferroelectric synaptic devices: challenges and engineering solutions.},
  author = {Kwon T and Choi HS and Lee DH and Han DH and Cho YH and Jeon I and Jung CH and Lim H and Moon T and Park MH},
  year = {2025},
  journal = {Chemical communications (Cambridge, England)},
  doi = {10.1039/d4cc05293e},
  url = {https://doi.org/10.1039/d4cc05293e}
}

RIS

TY  - JOUR
TI  - HfO(2)-based ferroelectric synaptic devices: challenges and engineering solutions.
AU  - Kwon T
AU  - Choi HS
AU  - Lee DH
AU  - Han DH
AU  - Cho YH
AU  - Jeon I
AU  - Jung CH
AU  - Lim H
AU  - Moon T
AU  - Park MH
PY  - 2025
JO  - Chemical communications (Cambridge, England)
DO  - 10.1039/d4cc05293e
UR  - https://doi.org/10.1039/d4cc05293e
ER  -

APA

T, K., HS, C., DH, L., DH, H., YH, C., I, J., CH, J., H, L., T, M., & MH, P. (2025). HfO(2)-based ferroelectric synaptic devices: challenges and engineering solutions.. Chemical communications (Cambridge, England). https://doi.org/10.1039/d4cc05293e

Source records

pubmed · retrieved 2026-09-26T23:29:17.238Z