5 nm Gate length field-effect transistors based on monolayer α-In(2)X(3) (X = S, Se, Te).
- DOI
- 10.1039/d5cp02433a
- Published
- 2025 Oct 22
- Container
- Physical chemistry chemical physics : PCCP
- Publisher
- Not recorded
- Open access
- unknown
Credibility signals
limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- cautionDOI registered: No matching Crossref record was present in this response.
- cautionDOI resolves: No matching Crossref record was present in this response.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty.
Cite this work
BibTeX
@article{allodium:10.1039/d5cp02433a,
title = {5 nm Gate length field-effect transistors based on monolayer α-In(2)X(3) (X = S, Se, Te).},
author = {Zhong YY and Dai JQ and Yuan J and Deng DW and Zhao MW},
year = {2025},
journal = {Physical chemistry chemical physics : PCCP},
doi = {10.1039/d5cp02433a},
url = {https://doi.org/10.1039/d5cp02433a}
}RIS
TY - JOUR TI - 5 nm Gate length field-effect transistors based on monolayer α-In(2)X(3) (X = S, Se, Te). AU - Zhong YY AU - Dai JQ AU - Yuan J AU - Deng DW AU - Zhao MW PY - 2025 JO - Physical chemistry chemical physics : PCCP DO - 10.1039/d5cp02433a UR - https://doi.org/10.1039/d5cp02433a ER -
APA
YY, Z., JQ, D., J, Y., DW, D., & MW, Z. (2025). 5 nm Gate length field-effect transistors based on monolayer α-In(2)X(3) (X = S, Se, Te).. Physical chemistry chemical physics : PCCP. https://doi.org/10.1039/d5cp02433a
Source records
- pubmed · retrieved 2026-09-25T12:57:41.499Z