Enhancement of the electrochemical properties of BiVO(4): the role of oxygen vacancies induced by Ag ion implantations.

Chauhan S, Saini R, Kumaravelu TA, Dong CL, Deva Rani Devi K, Kandasami A

DOI: 10.1039/d5cp04642d
Published: 2026 Apr 30
Container: Physical chemistry chemical physics : PCCP
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d5cp04642d,
  title = {Enhancement of the electrochemical properties of BiVO(4): the role of oxygen vacancies induced by Ag ion implantations.},
  author = {Chauhan S and Saini R and Kumaravelu TA and Dong CL and Deva Rani Devi K and Kandasami A},
  year = {2026},
  journal = {Physical chemistry chemical physics : PCCP},
  doi = {10.1039/d5cp04642d},
  url = {https://doi.org/10.1039/d5cp04642d}
}

RIS

TY  - JOUR
TI  - Enhancement of the electrochemical properties of BiVO(4): the role of oxygen vacancies induced by Ag ion implantations.
AU  - Chauhan S
AU  - Saini R
AU  - Kumaravelu TA
AU  - Dong CL
AU  - Deva Rani Devi K
AU  - Kandasami A
PY  - 2026
JO  - Physical chemistry chemical physics : PCCP
DO  - 10.1039/d5cp04642d
UR  - https://doi.org/10.1039/d5cp04642d
ER  -

APA

S, C., R, S., TA, K., CL, D., K, D. R. D., & A, K. (2026). Enhancement of the electrochemical properties of BiVO(4): the role of oxygen vacancies induced by Ag ion implantations.. Physical chemistry chemical physics : PCCP. https://doi.org/10.1039/d5cp04642d

Source records

pubmed · retrieved 2026-09-25T22:20:38.004Z