Tailoring electronic and optoelectronic properties of 2D-SiC via defects and doping: a first-principles study toward efficient white light-emitting diodes.

Haque MM, Choudhury SM

DOI: 10.1039/d5ra04586j
Published: 2025 Aug 18
Container: RSC advances
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1039/d5ra04586j,
  title = {Tailoring electronic and optoelectronic properties of 2D-SiC via defects and doping: a first-principles study toward efficient white light-emitting diodes.},
  author = {Haque MM and Choudhury SM},
  year = {2025},
  journal = {RSC advances},
  doi = {10.1039/d5ra04586j},
  url = {https://doi.org/10.1039/d5ra04586j}
}

RIS

TY  - JOUR
TI  - Tailoring electronic and optoelectronic properties of 2D-SiC via defects and doping: a first-principles study toward efficient white light-emitting diodes.
AU  - Haque MM
AU  - Choudhury SM
PY  - 2025
JO  - RSC advances
DO  - 10.1039/d5ra04586j
UR  - https://doi.org/10.1039/d5ra04586j
ER  -

APA

MM, H., & SM, C. (2025). Tailoring electronic and optoelectronic properties of 2D-SiC via defects and doping: a first-principles study toward efficient white light-emitting diodes.. RSC advances. https://doi.org/10.1039/d5ra04586j

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pubmed · retrieved 2026-09-25T02:34:48.806Z