Electronic structure evolution and quantum transport mechanism in F-doped SnO <sub>2</sub> thin films: a first-principles study

Jianyuan Yu, Ai Li, Yan Huang, Wenwu Zhao, Bin Hao, Jingkai Yang, Ziqiang Gu

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DOI: 10.1039/d6cp02258h
Published: 2026
Container: Physical Chemistry Chemical Physics
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6cp02258h,
  title = {Electronic structure evolution and quantum transport mechanism in F-doped SnO
                    <sub>2</sub>
                    thin films: a first-principles study},
  author = {Jianyuan Yu and Ai Li and Yan Huang and Wenwu Zhao and Bin Hao and Jingkai Yang and Ziqiang Gu},
  year = {2026},
  journal = {Physical Chemistry Chemical Physics},
  doi = {10.1039/d6cp02258h},
  url = {https://doi.org/10.1039/d6cp02258h}
}

RIS

TY  - JOUR
TI  - Electronic structure evolution and quantum transport mechanism in F-doped SnO
                    <sub>2</sub>
                    thin films: a first-principles study
AU  - Jianyuan Yu
AU  - Ai Li
AU  - Yan Huang
AU  - Wenwu Zhao
AU  - Bin Hao
AU  - Jingkai Yang
AU  - Ziqiang Gu
PY  - 2026
JO  - Physical Chemistry Chemical Physics
DO  - 10.1039/d6cp02258h
UR  - https://doi.org/10.1039/d6cp02258h
ER  -

APA

Yu, J., Li, A., Huang, Y., Zhao, W., Hao, B., Yang, J., & Gu, Z. (2026). Electronic structure evolution and quantum transport mechanism in F-doped SnO <sub>2</sub> thin films: a first-principles study. Physical Chemistry Chemical Physics. https://doi.org/10.1039/d6cp02258h

Source records

crossref · retrieved 2026-11-10T04:09:15.193Z