Ballistic performance limits of sub-5-nm monolayer GeS(2) and SnS(2) MOSFETs from first-principles quantum transport.
- DOI
- 10.1039/d6cp02566h
- Published
- 2026 Sep 23
- Container
- Physical chemistry chemical physics : PCCP
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1039/d6cp02566h,
title = {Ballistic performance limits of sub-5-nm monolayer GeS(2) and SnS(2) MOSFETs from first-principles quantum transport.},
author = {Ma XY and Guo YD and Jiang Y and Duan XL and Bian KR and Yang ZF and Guo F and Zeng HL and Yan XH},
year = {2026},
journal = {Physical chemistry chemical physics : PCCP},
doi = {10.1039/d6cp02566h},
url = {https://doi.org/10.1039/d6cp02566h}
}RIS
TY - JOUR TI - Ballistic performance limits of sub-5-nm monolayer GeS(2) and SnS(2) MOSFETs from first-principles quantum transport. AU - Ma XY AU - Guo YD AU - Jiang Y AU - Duan XL AU - Bian KR AU - Yang ZF AU - Guo F AU - Zeng HL AU - Yan XH PY - 2026 JO - Physical chemistry chemical physics : PCCP DO - 10.1039/d6cp02566h UR - https://doi.org/10.1039/d6cp02566h ER -
APA
XY, M., YD, G., Y, J., XL, D., KR, B., ZF, Y., F, G., HL, Z., & XH, Y. (2026). Ballistic performance limits of sub-5-nm monolayer GeS(2) and SnS(2) MOSFETs from first-principles quantum transport.. Physical chemistry chemical physics : PCCP. https://doi.org/10.1039/d6cp02566h
Source records
- pubmed · retrieved 2026-09-25T21:37:48.519Z