Theoretical design of quantum-tunneling-enabled ultra-steep-slope bipolar reconfigurable logic field-effect transistors based on 2D Janus XMoSiN <sub>2</sub> (X = O, S, Se, Te) monolayers
- DOI
- 10.1039/d6cp02621d
- Published
- 2026
- Container
- Physical Chemistry Chemical Physics
- Publisher
- Royal Society of Chemistry (RSC)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1039/d6cp02621d,
title = {Theoretical design of quantum-tunneling-enabled ultra-steep-slope bipolar reconfigurable logic field-effect transistors based on 2D Janus XMoSiN
<sub>2</sub>
(X = O, S, Se, Te) monolayers},
author = {Wenhao Zhang and Wenkai Zhao and Hui Wang and Feng Gao and Yuliang Liu and Shunran Shan and Chuanlu Yang and Dongqing Zou},
year = {2026},
journal = {Physical Chemistry Chemical Physics},
doi = {10.1039/d6cp02621d},
url = {https://doi.org/10.1039/d6cp02621d}
}RIS
TY - JOUR
TI - Theoretical design of quantum-tunneling-enabled ultra-steep-slope bipolar reconfigurable logic field-effect transistors based on 2D Janus XMoSiN
<sub>2</sub>
(X = O, S, Se, Te) monolayers
AU - Wenhao Zhang
AU - Wenkai Zhao
AU - Hui Wang
AU - Feng Gao
AU - Yuliang Liu
AU - Shunran Shan
AU - Chuanlu Yang
AU - Dongqing Zou
PY - 2026
JO - Physical Chemistry Chemical Physics
DO - 10.1039/d6cp02621d
UR - https://doi.org/10.1039/d6cp02621d
ER - APA
Zhang, W., Zhao, W., Wang, H., Gao, F., Liu, Y., Shan, S., Yang, C., & Zou, D. (2026). Theoretical design of quantum-tunneling-enabled ultra-steep-slope bipolar reconfigurable logic field-effect transistors based on 2D Janus XMoSiN <sub>2</sub> (X = O, S, Se, Te) monolayers. Physical Chemistry Chemical Physics. https://doi.org/10.1039/d6cp02621d
Source records
- crossref · retrieved 2026-11-03T10:17:48.313Z