Ab initio quantum transport simulation of sub-5 nm monolayer SnTe field-effect transistors.
- DOI
- 10.1039/d6cp02902g
- Published
- 2026 Nov 3
- Container
- Physical chemistry chemical physics : PCCP
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1039/d6cp02902g,
title = {Ab initio quantum transport simulation of sub-5 nm monolayer SnTe field-effect transistors.},
author = {Li Y and Guo Y and Li Y and Pan F and Lu J},
year = {2026},
journal = {Physical chemistry chemical physics : PCCP},
doi = {10.1039/d6cp02902g},
url = {https://doi.org/10.1039/d6cp02902g}
}RIS
TY - JOUR TI - Ab initio quantum transport simulation of sub-5 nm monolayer SnTe field-effect transistors. AU - Li Y AU - Guo Y AU - Li Y AU - Pan F AU - Lu J PY - 2026 JO - Physical chemistry chemical physics : PCCP DO - 10.1039/d6cp02902g UR - https://doi.org/10.1039/d6cp02902g ER -
APA
Y, L., Y, G., Y, L., F, P., & J, L. (2026). Ab initio quantum transport simulation of sub-5 nm monolayer SnTe field-effect transistors.. Physical chemistry chemical physics : PCCP. https://doi.org/10.1039/d6cp02902g
Source records
- pubmed · retrieved 2026-11-10T10:48:10.448Z