Correction: Comparison of the optical and transport characteristics due to symmetrical and asymmetrical interface-optical-phonon modes of asymmetrical Gaussian GaAs/AlAs quantum wells for both AlAs-barrier and GaAs-well layers

Ho Kim Dan, Le Phuong Long, Huynh Thi Phuong Thuy, Nguyen Dinh Hien

Open source

DOI
10.1039/d6cp90131j
Published
2026
Container
Physical Chemistry Chemical Physics
Publisher
Royal Society of Chemistry (RSC)
Open access
unknown

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BibTeX

@article{allodium:10.1039/d6cp90131j,
  title = {Correction: Comparison of the optical and transport characteristics due to symmetrical and asymmetrical interface-optical-phonon modes of asymmetrical Gaussian GaAs/AlAs quantum wells for both AlAs-barrier and GaAs-well layers},
  author = {Ho Kim Dan and Le Phuong Long and Huynh Thi Phuong Thuy and Nguyen Dinh Hien},
  year = {2026},
  journal = {Physical Chemistry Chemical Physics},
  doi = {10.1039/d6cp90131j},
  url = {https://doi.org/10.1039/d6cp90131j}
}

RIS

TY  - JOUR
TI  - Correction: Comparison of the optical and transport characteristics due to symmetrical and asymmetrical interface-optical-phonon modes of asymmetrical Gaussian GaAs/AlAs quantum wells for both AlAs-barrier and GaAs-well layers
AU  - Ho Kim Dan
AU  - Le Phuong Long
AU  - Huynh Thi Phuong Thuy
AU  - Nguyen Dinh Hien
PY  - 2026
JO  - Physical Chemistry Chemical Physics
DO  - 10.1039/d6cp90131j
UR  - https://doi.org/10.1039/d6cp90131j
ER  - 

APA

Dan, H. K., Long, L. P., Thuy, H. T. P., & Hien, N. D. (2026). Correction: Comparison of the optical and transport characteristics due to symmetrical and asymmetrical interface-optical-phonon modes of asymmetrical Gaussian GaAs/AlAs quantum wells for both AlAs-barrier and GaAs-well layers. Physical Chemistry Chemical Physics. https://doi.org/10.1039/d6cp90131j

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