Thermally enhanced resistive switching in interface-engineered AgHfO 3− x /Al 2 O 3 memristors via trap depopulation for neuromorphic computing

Swaraj Mukherjee, Mubashir M. Ganaie, Ayan Chatterjee, Chaitanya B. Auti, Jonathan Adamu, Chittaranjan Das, Pradeep Kumar, Lavi Tyagi, Michael Saliba, Mahesh Kumar

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DOI: 10.1039/d6mh00879h
Published: 2026
Container: Materials Horizons
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6mh00879h,
  title = {Thermally enhanced resistive switching in interface-engineered AgHfO
                    <sub>
                      3−
                      <i>x</i>
                    </sub>
                    /Al
                    <sub>2</sub>
                    O
                    <sub>3</sub>
                    memristors
                    <i>via</i>
                    trap depopulation for neuromorphic computing},
  author = {Swaraj Mukherjee and Mubashir M. Ganaie and Ayan Chatterjee and Chaitanya B. Auti and Jonathan Adamu and Chittaranjan Das and Pradeep Kumar and Lavi Tyagi and Michael Saliba and Mahesh Kumar},
  year = {2026},
  journal = {Materials Horizons},
  doi = {10.1039/d6mh00879h},
  url = {https://doi.org/10.1039/d6mh00879h}
}

RIS

TY  - JOUR
TI  - Thermally enhanced resistive switching in interface-engineered AgHfO
                    <sub>
                      3−
                      <i>x</i>
                    </sub>
                    /Al
                    <sub>2</sub>
                    O
                    <sub>3</sub>
                    memristors
                    <i>via</i>
                    trap depopulation for neuromorphic computing
AU  - Swaraj Mukherjee
AU  - Mubashir M. Ganaie
AU  - Ayan Chatterjee
AU  - Chaitanya B. Auti
AU  - Jonathan Adamu
AU  - Chittaranjan Das
AU  - Pradeep Kumar
AU  - Lavi Tyagi
AU  - Michael Saliba
AU  - Mahesh Kumar
PY  - 2026
JO  - Materials Horizons
DO  - 10.1039/d6mh00879h
UR  - https://doi.org/10.1039/d6mh00879h
ER  -

APA

Mukherjee, S., Ganaie, M. M., Chatterjee, A., Auti, C. B., Adamu, J., Das, C., Kumar, P., Tyagi, L., Saliba, M., & Kumar, M. (2026). Thermally enhanced resistive switching in interface-engineered AgHfO 3− x /Al 2 O 3 memristors via trap depopulation for neuromorphic computing. Materials Horizons. https://doi.org/10.1039/d6mh00879h

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crossref · retrieved 2026-09-25T10:00:43.354Z

Thermally enhanced resistive switching in interface-engineered AgHfO <sub> 3− <i>x</i> </sub> /Al <sub>2</sub> O <sub>3</sub> memristors <i>via</i> trap depopulation for neuromorphic computing

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