Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb <sub>2</sub> O <sub>5</sub> for high-performance metal–insulator–metal capacitors
- DOI
- 10.1039/d6mh01361a
- Published
- 2026
- Container
- Materials Horizons
- Publisher
- Royal Society of Chemistry (RSC)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1039/d6mh01361a,
title = {Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb
<sub>2</sub>
O
<sub>5</sub>
for high-performance metal–insulator–metal capacitors},
author = {Yongju Kwon and Jiwoo Oh and Jeongbin Lee and Chang Mo Yoon and Ji-Hoon Ahn and Yongjoo Park and Kibum Kang and Woo-Hee Kim},
year = {2026},
journal = {Materials Horizons},
doi = {10.1039/d6mh01361a},
url = {https://doi.org/10.1039/d6mh01361a}
}RIS
TY - JOUR
TI - Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb
<sub>2</sub>
O
<sub>5</sub>
for high-performance metal–insulator–metal capacitors
AU - Yongju Kwon
AU - Jiwoo Oh
AU - Jeongbin Lee
AU - Chang Mo Yoon
AU - Ji-Hoon Ahn
AU - Yongjoo Park
AU - Kibum Kang
AU - Woo-Hee Kim
PY - 2026
JO - Materials Horizons
DO - 10.1039/d6mh01361a
UR - https://doi.org/10.1039/d6mh01361a
ER - APA
Kwon, Y., Oh, J., Lee, J., Yoon, C. M., Ahn, J., Park, Y., Kang, K., & Kim, W. (2026). Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb <sub>2</sub> O <sub>5</sub> for high-performance metal–insulator–metal capacitors. Materials Horizons. https://doi.org/10.1039/d6mh01361a
Source records
- crossref · retrieved 2026-11-10T08:59:23.327Z