Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb(2)O(5) for high-performance metal-insulator-metal capacitors.
- DOI
- 10.1039/d6mh01361a
- Published
- 2026 Sep 22
- Container
- Materials horizons
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1039/d6mh01361a,
title = {Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb(2)O(5) for high-performance metal-insulator-metal capacitors.},
author = {Kwon Y and Oh J and Lee J and Yoon CM and Ahn JH and Park Y and Kang K and Kim WH},
year = {2026},
journal = {Materials horizons},
doi = {10.1039/d6mh01361a},
url = {https://doi.org/10.1039/d6mh01361a}
}RIS
TY - JOUR TI - Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb(2)O(5) for high-performance metal-insulator-metal capacitors. AU - Kwon Y AU - Oh J AU - Lee J AU - Yoon CM AU - Ahn JH AU - Park Y AU - Kang K AU - Kim WH PY - 2026 JO - Materials horizons DO - 10.1039/d6mh01361a UR - https://doi.org/10.1039/d6mh01361a ER -
APA
Y, K., J, O., J, L., CM, Y., JH, A., Y, P., K, K., & WH, K. (2026). Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb(2)O(5) for high-performance metal-insulator-metal capacitors.. Materials horizons. https://doi.org/10.1039/d6mh01361a
Source records
- pubmed · retrieved 2026-09-25T14:33:57.028Z