Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage.

Zhou R, Kim IJ, Park S, Kwon H, Lee JS

DOI: 10.1039/d6na00054a
Published: 2026 Jul 2
Container: Nanoscale advances
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1039/d6na00054a,
  title = {Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage.},
  author = {Zhou R and Kim IJ and Park S and Kwon H and Lee JS},
  year = {2026},
  journal = {Nanoscale advances},
  doi = {10.1039/d6na00054a},
  url = {https://doi.org/10.1039/d6na00054a}
}

RIS

TY  - JOUR
TI  - Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage.
AU  - Zhou R
AU  - Kim IJ
AU  - Park S
AU  - Kwon H
AU  - Lee JS
PY  - 2026
JO  - Nanoscale advances
DO  - 10.1039/d6na00054a
UR  - https://doi.org/10.1039/d6na00054a
ER  -

APA

R, Z., IJ, K., S, P., H, K., & JS, L. (2026). Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage.. Nanoscale advances. https://doi.org/10.1039/d6na00054a

Source records

pubmed · retrieved 2026-09-24T22:33:28.400Z