Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage

Ruifu Zhou, Ik-Jyae Kim, Sejun Park, Hyukchang Kwon, Jang-Sik Lee

Open source

DOI: 10.1039/d6na00054a
Published: 2026
Container: Nanoscale Advances
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6na00054a,
  title = {Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage},
  author = {Ruifu Zhou and Ik-Jyae Kim and Sejun Park and Hyukchang Kwon and Jang-Sik Lee},
  year = {2026},
  journal = {Nanoscale Advances},
  doi = {10.1039/d6na00054a},
  url = {https://doi.org/10.1039/d6na00054a}
}

RIS

TY  - JOUR
TI  - Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage
AU  - Ruifu Zhou
AU  - Ik-Jyae Kim
AU  - Sejun Park
AU  - Hyukchang Kwon
AU  - Jang-Sik Lee
PY  - 2026
JO  - Nanoscale Advances
DO  - 10.1039/d6na00054a
UR  - https://doi.org/10.1039/d6na00054a
ER  -

APA

Zhou, R., Kim, I., Park, S., Kwon, H., & Lee, J. (2026). Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage. Nanoscale Advances. https://doi.org/10.1039/d6na00054a

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crossref · retrieved 2026-11-10T08:41:16.355Z