Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials
- DOI
- 10.1039/d6na90047j
- Published
- 2026
- Container
- Nanoscale Advances
- Publisher
- Royal Society of Chemistry (RSC)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1039/d6na90047j,
title = {Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials},
author = {Ho Kim Dan and Pham Tuan Vinh and Le Phuong Long and Huynh Thi Phuong Thuy and Nguyen Dinh Hien},
year = {2026},
journal = {Nanoscale Advances},
doi = {10.1039/d6na90047j},
url = {https://doi.org/10.1039/d6na90047j}
}RIS
TY - JOUR TI - Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials AU - Ho Kim Dan AU - Pham Tuan Vinh AU - Le Phuong Long AU - Huynh Thi Phuong Thuy AU - Nguyen Dinh Hien PY - 2026 JO - Nanoscale Advances DO - 10.1039/d6na90047j UR - https://doi.org/10.1039/d6na90047j ER -
APA
Dan, H. K., Vinh, P. T., Long, L. P., Thuy, H. T. P., & Hien, N. D. (2026). Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials. Nanoscale Advances. https://doi.org/10.1039/d6na90047j
Source records
- crossref · retrieved 2026-09-25T09:27:30.694Z