Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials

Ho Kim Dan, Pham Tuan Vinh, Le Phuong Long, Huynh Thi Phuong Thuy, Nguyen Dinh Hien

Open source

DOI
10.1039/d6na90047j
Published
2026
Container
Nanoscale Advances
Publisher
Royal Society of Chemistry (RSC)
Open access
unknown

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BibTeX

@article{allodium:10.1039/d6na90047j,
  title = {Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials},
  author = {Ho Kim Dan and Pham Tuan Vinh and Le Phuong Long and Huynh Thi Phuong Thuy and Nguyen Dinh Hien},
  year = {2026},
  journal = {Nanoscale Advances},
  doi = {10.1039/d6na90047j},
  url = {https://doi.org/10.1039/d6na90047j}
}

RIS

TY  - JOUR
TI  - Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials
AU  - Ho Kim Dan
AU  - Pham Tuan Vinh
AU  - Le Phuong Long
AU  - Huynh Thi Phuong Thuy
AU  - Nguyen Dinh Hien
PY  - 2026
JO  - Nanoscale Advances
DO  - 10.1039/d6na90047j
UR  - https://doi.org/10.1039/d6na90047j
ER  - 

APA

Dan, H. K., Vinh, P. T., Long, L. P., Thuy, H. T. P., & Hien, N. D. (2026). Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials. Nanoscale Advances. https://doi.org/10.1039/d6na90047j

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