Ferroelectricity in wurtzite atomic layer annealed aluminum nitride thin films

Dominic A. Dalba, Dilan M. Gamachchi, Indeewari M. Karunarathne, Bipin Bhattarai, Xiaoman Zhang, Wangwang Xu, Somayeh Saadat Niavol, Dongmei Cao, W. J. Meng, Andrew C. Meng

Open source

DOI: 10.1039/d6nh00035e
Published: 2026
Container: Nanoscale Horizons
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6nh00035e,
  title = {Ferroelectricity in wurtzite atomic layer annealed aluminum nitride thin films},
  author = {Dominic A. Dalba and Dilan M. Gamachchi and Indeewari M. Karunarathne and Bipin Bhattarai and Xiaoman Zhang and Wangwang Xu and Somayeh Saadat Niavol and Dongmei Cao and W. J. Meng and Andrew C. Meng},
  year = {2026},
  journal = {Nanoscale Horizons},
  doi = {10.1039/d6nh00035e},
  url = {https://doi.org/10.1039/d6nh00035e}
}

RIS

TY  - JOUR
TI  - Ferroelectricity in wurtzite atomic layer annealed aluminum nitride thin films
AU  - Dominic A. Dalba
AU  - Dilan M. Gamachchi
AU  - Indeewari M. Karunarathne
AU  - Bipin Bhattarai
AU  - Xiaoman Zhang
AU  - Wangwang Xu
AU  - Somayeh Saadat Niavol
AU  - Dongmei Cao
AU  - W. J. Meng
AU  - Andrew C. Meng
PY  - 2026
JO  - Nanoscale Horizons
DO  - 10.1039/d6nh00035e
UR  - https://doi.org/10.1039/d6nh00035e
ER  -

APA

Dalba, D. A., Gamachchi, D. M., Karunarathne, I. M., Bhattarai, B., Zhang, X., Xu, W., Niavol, S. S., Cao, D., Meng, W. J., & Meng, A. C. (2026). Ferroelectricity in wurtzite atomic layer annealed aluminum nitride thin films. Nanoscale Horizons. https://doi.org/10.1039/d6nh00035e

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crossref · retrieved 2026-11-10T20:16:54.812Z