Scaling challenges and engineering approaches for oxide semiconductor FETs toward display and memory systems

Yong Seon Hwang, Hye Jin Son, I. Sak Lee, Kyungmoon Kwak, Jong Bin An, Hyun Jae Kim

Open source

DOI: 10.1039/d6nr01611a
Published: 2026
Container: Nanoscale
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6nr01611a,
  title = {Scaling challenges and engineering approaches for oxide semiconductor FETs toward display and memory systems},
  author = {Yong Seon Hwang and Hye Jin Son and I. Sak Lee and Kyungmoon Kwak and Jong Bin An and Hyun Jae Kim},
  year = {2026},
  journal = {Nanoscale},
  doi = {10.1039/d6nr01611a},
  url = {https://doi.org/10.1039/d6nr01611a}
}

RIS

TY  - JOUR
TI  - Scaling challenges and engineering approaches for oxide semiconductor FETs toward display and memory systems
AU  - Yong Seon Hwang
AU  - Hye Jin Son
AU  - I. Sak Lee
AU  - Kyungmoon Kwak
AU  - Jong Bin An
AU  - Hyun Jae Kim
PY  - 2026
JO  - Nanoscale
DO  - 10.1039/d6nr01611a
UR  - https://doi.org/10.1039/d6nr01611a
ER  -

APA

Hwang, Y. S., Son, H. J., Lee, I. S., Kwak, K., An, J. B., & Kim, H. J. (2026). Scaling challenges and engineering approaches for oxide semiconductor FETs toward display and memory systems. Nanoscale. https://doi.org/10.1039/d6nr01611a

Source records

crossref · retrieved 2026-09-25T22:38:34.030Z