Defect-engineered boron nitride memristors with enhanced uniformity and stability for CNN-based image encryption and recognition.
- DOI
- 10.1039/d6nr02357f
- Published
- 2026-08-27
- Container
- Nanoscale
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1039/d6nr02357f,
title = {Defect-engineered boron nitride memristors with enhanced uniformity and stability for CNN-based image encryption and recognition.},
author = {Chen X and Li Z and Guo T and Liu H and Chen X and Tao H and Niu S and Zhu G and Song X and Wang L and Zeng H.},
year = {2026},
journal = {Nanoscale},
doi = {10.1039/d6nr02357f},
url = {https://doi.org/10.1039/d6nr02357f}
}RIS
TY - JOUR TI - Defect-engineered boron nitride memristors with enhanced uniformity and stability for CNN-based image encryption and recognition. AU - Chen X AU - Li Z AU - Guo T AU - Liu H AU - Chen X AU - Tao H AU - Niu S AU - Zhu G AU - Song X AU - Wang L AU - Zeng H. PY - 2026 JO - Nanoscale DO - 10.1039/d6nr02357f UR - https://doi.org/10.1039/d6nr02357f ER -
APA
X, C., Z, L., T, G., H, L., X, C., H, T., S, N., G, Z., X, S., L, W., & H., Z. (2026). Defect-engineered boron nitride memristors with enhanced uniformity and stability for CNN-based image encryption and recognition.. Nanoscale. https://doi.org/10.1039/d6nr02357f
Source records
- europe-pmc · retrieved 2026-09-25T01:55:28.997Z