A monolayer SnS <sub>2</sub> Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart

Hong Li, Tianshuo Duan, Xiaozhe Zhang, Fengbin Liu, Jing Lu

Open source

DOI: 10.1039/d6nr02642g
Published: 2026
Container: Nanoscale
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6nr02642g,
  title = {A monolayer SnS
                    <sub>2</sub>
                    Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart},
  author = {Hong Li and Tianshuo Duan and Xiaozhe Zhang and Fengbin Liu and Jing Lu},
  year = {2026},
  journal = {Nanoscale},
  doi = {10.1039/d6nr02642g},
  url = {https://doi.org/10.1039/d6nr02642g}
}

RIS

TY  - JOUR
TI  - A monolayer SnS
                    <sub>2</sub>
                    Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart
AU  - Hong Li
AU  - Tianshuo Duan
AU  - Xiaozhe Zhang
AU  - Fengbin Liu
AU  - Jing Lu
PY  - 2026
JO  - Nanoscale
DO  - 10.1039/d6nr02642g
UR  - https://doi.org/10.1039/d6nr02642g
ER  -

APA

Li, H., Duan, T., Zhang, X., Liu, F., & Lu, J. (2026). A monolayer SnS <sub>2</sub> Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart. Nanoscale. https://doi.org/10.1039/d6nr02642g

Source records

crossref · retrieved 2026-11-08T10:47:29.411Z