Voltage-controlled phosphate precipitation gating in solid-state nanopore memristors

Weihong Wang, German Lanzavecchia, Ali Douaki, Shukun Weng, Yanqiu Zou, Huaizhou Jin, Alberto Giacomello, Lorenzo Iannetti, Roman Krahne, Shangzhong Jin, Makusu Tsutsui, Denis Garoli

Open source

DOI: 10.1039/d6nr03298b
Published: 2026
Container: Nanoscale
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6nr03298b,
  title = {Voltage-controlled phosphate precipitation gating in solid-state nanopore memristors},
  author = {Weihong Wang and German Lanzavecchia and Ali Douaki and Shukun Weng and Yanqiu Zou and Huaizhou Jin and Alberto Giacomello and Lorenzo Iannetti and Roman Krahne and Shangzhong Jin and Makusu Tsutsui and Denis Garoli},
  year = {2026},
  journal = {Nanoscale},
  doi = {10.1039/d6nr03298b},
  url = {https://doi.org/10.1039/d6nr03298b}
}

RIS

TY  - JOUR
TI  - Voltage-controlled phosphate precipitation gating in solid-state nanopore memristors
AU  - Weihong Wang
AU  - German Lanzavecchia
AU  - Ali Douaki
AU  - Shukun Weng
AU  - Yanqiu Zou
AU  - Huaizhou Jin
AU  - Alberto Giacomello
AU  - Lorenzo Iannetti
AU  - Roman Krahne
AU  - Shangzhong Jin
AU  - Makusu Tsutsui
AU  - Denis Garoli
PY  - 2026
JO  - Nanoscale
DO  - 10.1039/d6nr03298b
UR  - https://doi.org/10.1039/d6nr03298b
ER  -

APA

Wang, W., Lanzavecchia, G., Douaki, A., Weng, S., Zou, Y., Jin, H., Giacomello, A., Iannetti, L., Krahne, R., Jin, S., Tsutsui, M., & Garoli, D. (2026). Voltage-controlled phosphate precipitation gating in solid-state nanopore memristors. Nanoscale. https://doi.org/10.1039/d6nr03298b

Source records

crossref · retrieved 2026-11-10T09:00:45.320Z