Low-temperature, vacuum-free deposition of N-DMBI-H enables high conductivities in organic semiconductors

Federico Ferrari, Oliver Pokerznik, L. Jan Anton Koster

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DOI: 10.1039/d6ra05776d
Published: 2026
Container: RSC Advances
Publisher: Royal Society of Chemistry (RSC)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1039/d6ra05776d,
  title = {Low-temperature, vacuum-free deposition of N-DMBI-H enables high conductivities in organic semiconductors},
  author = {Federico Ferrari and Oliver Pokerznik and L. Jan Anton Koster},
  year = {2026},
  journal = {RSC Advances},
  doi = {10.1039/d6ra05776d},
  url = {https://doi.org/10.1039/d6ra05776d}
}

RIS

TY  - JOUR
TI  - Low-temperature, vacuum-free deposition of N-DMBI-H enables high conductivities in organic semiconductors
AU  - Federico Ferrari
AU  - Oliver Pokerznik
AU  - L. Jan Anton Koster
PY  - 2026
JO  - RSC Advances
DO  - 10.1039/d6ra05776d
UR  - https://doi.org/10.1039/d6ra05776d
ER  -

APA

Ferrari, F., Pokerznik, O., & Koster, L. J. A. (2026). Low-temperature, vacuum-free deposition of N-DMBI-H enables high conductivities in organic semiconductors. RSC Advances. https://doi.org/10.1039/d6ra05776d

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crossref · retrieved 2026-09-27T06:20:09.541Z