Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator
- DOI
- 10.1051/epjap/2011110272
- Published
- 2011-12-23
- Container
- The European Physical Journal Applied Physics
- Publisher
- EDP Sciences
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1051/epjap/2011110272,
title = {Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator},
author = {C.H. Kim and D. Tondelier and B. Geffroy and Y. Bonnassieux and G. Horowitz},
year = {2011},
journal = {The European Physical Journal Applied Physics},
doi = {10.1051/epjap/2011110272},
url = {https://doi.org/10.1051/epjap/2011110272}
}RIS
TY - JOUR TI - Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator AU - C.H. Kim AU - D. Tondelier AU - B. Geffroy AU - Y. Bonnassieux AU - G. Horowitz PY - 2011 JO - The European Physical Journal Applied Physics DO - 10.1051/epjap/2011110272 UR - https://doi.org/10.1051/epjap/2011110272 ER -
APA
Kim, C., Tondelier, D., Geffroy, B., Bonnassieux, Y., & Horowitz, G. (2011). Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator. The European Physical Journal Applied Physics. https://doi.org/10.1051/epjap/2011110272
Source records
- crossref · retrieved 2026-11-10T14:40:20.391Z