Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon

C. Claeys, E. Simoen, J. Vanhellemont

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DOI: 10.1051/jp3:1997200
Published: 1997-07
Container: Journal de Physique III
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/jp3:1997200,
  title = {Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon},
  author = {C. Claeys and E. Simoen and J. Vanhellemont},
  year = {1997},
  journal = {Journal de Physique III},
  doi = {10.1051/jp3:1997200},
  url = {https://doi.org/10.1051/jp3:1997200}
}

RIS

TY  - JOUR
TI  - Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon
AU  - C. Claeys
AU  - E. Simoen
AU  - J. Vanhellemont
PY  - 1997
JO  - Journal de Physique III
DO  - 10.1051/jp3:1997200
UR  - https://doi.org/10.1051/jp3:1997200
ER  -

APA

Claeys, C., Simoen, E., & Vanhellemont, J. (1997). Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon. Journal de Physique III. https://doi.org/10.1051/jp3:1997200

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crossref · retrieved 2026-09-25T04:57:42.390Z